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ROHM Semiconductor RGTH60TS65GC11
IGBT TRNCH FIELD 650V 58A TO247N![part number has RoHS](/img/RoHS2.png)
Manufacturer # :RGTH60TS65GC11
Manufacturer :ROHM Semiconductor
Dasenic # :C323A1-DS
Datasheet :
RGTH60TS65GC11 Datasheet
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Description : IGBT TRNCH FIELD 650V 58A TO247N TO-247-3 Tube
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120+ | $ 0.697800 | $ 83.74 |
510+ | $ 0.630000 | $ 321.3 |
In Stock: 1950
MOQ :1 PCS
Packaging :TO-247-3 Tube
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price : $ 1.053
Total :$ 1.05
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Not For New Designs
- Operating Temperature:-40°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Input Type:Standard
- Power - Max:197 W
- Supplier Device Package:TO-247N
- Current - Collector ( Ic) ( Max):58 A
- Voltage - Collector Emitter Breakdown ( Max):650 V
- I G B T Type:Trench Field Stop
- Vce(on) ( Max) @ Vge, Ic:2.1V @ 15V, 30A
- Current - Collector Pulsed ( Icm):120 A
- Gate Charge:58 nC
- Td (on/off) @ 25° C:27ns/105ns
- Test Condition:400V, 30A, 10Ohm, 15V
- Base Product Number:RGTH60
- Packaging:Tube