Rochester Electronics HGT1S7N60C3D technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - IGBTs - Single
Product Status:Active
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Input Type:Standard
Power - Max:60 W
Supplier Device Package:I2PAK (TO-262)
Reverse Recovery Time (trr):25 ns
Current - Collector ( Ic) ( Max):14 A
Voltage - Collector Emitter Breakdown ( Max):600 V
I G B T Type:-
Vce(on) ( Max) @ Vge, Ic:2V @ 15V, 7A
Current - Collector Pulsed ( Icm):56 A
Switching Energy:-
Gate Charge:38 nC
Td (on/off) @ 25° C:-
Test Condition:-
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:Vendor omitted MSL Rating information
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product
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Q: What is the warranty period for the HGT1S7N60C3D?
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Q: What is the return or replacement process for HGT1S7N60C3D?
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
For the return process:
- Please inform us within 365 days of receiving the product.
- Obtain Return Authorization from our team.
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HGT1S7N60C3D Datasheet
