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IXYS Corporation IXSA10N60B2D1
IGBT 600V 20A 100W TO263
Manufacturer # :IXSA10N60B2D1
Manufacturer :IXYS Corporation
Dasenic # :E068A7-DS
Datasheet :
IXSA10N60B2D1 Datasheet
IXSA10N60B2D1 DatasheetSample :
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Description : IGBT 600V 20A 100W TO263 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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| Quantity | Unit Price | Total |
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In Stock: 81
MOQ :1 PCS
Packaging :TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price : $ 0
Total :$ 0.00
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Input Type:Standard
- Power - Max:100 W
- Supplier Device Package:TO-263AA
- Reverse Recovery Time (trr):25 ns
- Current - Collector ( Ic) ( Max):20 A
- Voltage - Collector Emitter Breakdown ( Max):600 V
- I G B T Type:PT
- Vce(on) ( Max) @ Vge, Ic:2.5V @ 15V, 10A
- Current - Collector Pulsed ( Icm):30 A
- Switching Energy:430µJ (off)
- Gate Charge:17 nC
- Td (on/off) @ 25° C:30ns/180ns
- Test Condition:480V, 10A, 30Ohm, 15V
