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Infineon Technologies SGB15N60ATMA1
Manufacturer # :SGB15N60ATMA1
Manufacturer :Infineon Technologies
Dasenic # :B85683-DS
Datasheet : SGB15N60ATMA1 Datasheet
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Description : IGBT 600V 31A 139W TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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In Stock: 42
MOQ :1 PCS
Packaging :TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price : $ 0
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Input Type:Standard
- Power - Max:139 W
- Supplier Device Package:PG-TO263-3-2
- Current - Collector ( Ic) ( Max):31 A
- Voltage - Collector Emitter Breakdown ( Max):600 V
- I G B T Type:NPT
- Vce(on) ( Max) @ Vge, Ic:2.4V @ 15V, 15A
- Current - Collector Pulsed ( Icm):62 A
- Switching Energy:570µJ
- Gate Charge:76 nC
- Td (on/off) @ 25° C:32ns/234ns
- Test Condition:400V, 15A, 21Ohm, 15V