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Infineon Technologies IRG7PH35UD1MPBF
IGBT W/ULTRA-LOW VF DIODE FOR IN
Manufacturer # :IRG7PH35UD1MPBF
Manufacturer :Infineon Technologies
Dasenic # :152B69-DS
Datasheet :
IRG7PH35UD1MPBF Datasheet
IRG7PH35UD1MPBF DatasheetSample :
Customer # :
Description : IGBT W/ULTRA-LOW VF DIODE FOR IN TO-247-3 Bulk
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.700000 | $ 2.7 |
| 25+ | $ 2.646000 | $ 66.15 |
| 100+ | $ 2.538000 | $ 253.8 |
| 500+ | $ 2.430000 | $ 1215 |
| 1000+ | $ 2.295000 | $ 2295 |
In Stock: 22916
MOQ :1 PCS
Packaging :TO-247-3 Bulk
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 2.7
Total :$ 2.70
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Input Type:Standard
- Power - Max:179 W
- Supplier Device Package:TO-247AD
- Current - Collector ( Ic) ( Max):50 A
- Voltage - Collector Emitter Breakdown ( Max):1200 V
- I G B T Type:Trench
- Vce(on) ( Max) @ Vge, Ic:2.2V @ 15V, 20A
- Current - Collector Pulsed ( Icm):150 A
- Switching Energy:620µJ (off)
- Gate Charge:130 nC
- Td (on/off) @ 25° C:-/160ns
- Test Condition:600V, 20A, 10Ohm, 15V
- Base Product Number:IRG7PH35
