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Infineon Technologies IRG7PG35U-EPBF
IGBT
Manufacturer # :IRG7PG35U-EPBF
Manufacturer :Infineon Technologies
Dasenic # :966695-DS
Datasheet :
IRG7PG35U-EPBF Datasheet
IRG7PG35U-EPBF DatasheetSample :
Customer # :
Description : IGBT TO-247-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.601000 | $ 2.6 |
| 25+ | $ 2.547000 | $ 63.68 |
| 100+ | $ 2.439000 | $ 243.9 |
| 500+ | $ 2.340000 | $ 1170 |
| 1000+ | $ 2.205000 | $ 2205 |
In Stock: 3900
MOQ :1 PCS
Packaging :TO-247-3
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 2.601
Total :$ 2.60
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Input Type:Standard
- Power - Max:210 W
- Supplier Device Package:TO-247AD
- Current - Collector ( Ic) ( Max):55 A
- Voltage - Collector Emitter Breakdown ( Max):1000 V
- I G B T Type:Trench
- Vce(on) ( Max) @ Vge, Ic:2.2V @ 15V, 20A
- Current - Collector Pulsed ( Icm):60 A
- Switching Energy:1.06mJ (on), 620µJ (off)
- Gate Charge:85 nC
- Td (on/off) @ 25° C:30ns/160ns
- Test Condition:600V, 20A, 10Ohm, 15V
