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Infineon Technologies IGC07T120T8LX1SA2
IGBT 1200V 4A SAWN ON FOIL![part number has RoHS](/img/RoHS2.png)
Manufacturer # :IGC07T120T8LX1SA2
Manufacturer :Infineon Technologies
Dasenic # :2406DF-DS
Datasheet :
IGC07T120T8LX1SA2 Datasheet
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Description : IGBT 1200V 4A SAWN ON FOIL Die
Pricing (USD) : *To apply for a price, please click the Send Target Price button
Quantity | Unit Price | Total |
10+ | $ 4.242000 | $ 42.42 |
36243+ | $ 2.121000 | $ 76871.4 |
37000+ | $ 2.054700 | $ 76023.9 |
73000+ | $ 1.988400 | $ 145153.2 |
190000+ | $ 1.922100 | $ 365199 |
In Stock: 1995
MOQ :1 PCS
Packaging :Die
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 4.242
Total :$ 4.24
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Operating Temperature:-40°C ~ 175°C (TJ)
- Package / Case:Die
- Input Type:Standard
- Supplier Device Package:Die
- Voltage - Collector Emitter Breakdown ( Max):1200 V
- I G B T Type:Trench Field Stop
- Vce(on) ( Max) @ Vge, Ic:2.02V @ 15V, 4A
- Current - Collector Pulsed ( Icm):12 A