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Vishay Intertechnology SI4412ADY-T1-GE3
MOSFET N-CH 30V 5.8A 8SO
Manufacturer # :SI4412ADY-T1-GE3
Manufacturer :Vishay Intertechnology
Dasenic # :9380BD-DS
Datasheet :
SI4412ADY-T1-GE3 Datasheet
SI4412ADY-T1-GE3 DatasheetSample :
Customer # :
Description : MOSFET N-CH 30V 5.8A 8SO 8-SOIC (0.154", 3.90mm Width)
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.488900 | $ 14.89 |
| 2500+ | $ 0.992600 | $ 2481.5 |
| 5000+ | $ 0.945400 | $ 4727 |
| 12500+ | $ 0.901700 | $ 11271.25 |
In Stock: 81
MOQ :1 PCS
Packaging :8-SOIC (0.154", 3.90mm Width)
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 1.4889
Total :$ 1.49
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOIC
- Power Dissipation ( Max):1.3W (Ta)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:5.8A (Ta)
- Rds On ( Max) @ Id, Vgs:24mOhm @ 8A, 10V
- Vgs(th) ( Max) @ Id:1V @ 250µA (Min)
- Gate Charge ( Qg) ( Max) @ Vgs:20 nC @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
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