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PN Junction Semiconductor P3M12080K4
Manufacturer # :P3M12080K4
Manufacturer :PN Junction Semiconductor
Dasenic # :P3M12080K4-DS
Datasheet : P3M12080K4 Datasheet
Customer # :
Description : SICFET N-CH 1200V 47A TO-247-4
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In Stock: 682
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 23.8
Total :$ 23.80
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P3M12080K4 information
PN Junction Semiconductor P3M12080K4 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-4
- Technology:SiCFET (Silicon Carbide)
- Supplier Device Package:TO-247-4L
- Power Dissipation ( Max):221W
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):1200 V
- Current - Continuous Drain ( Id) @ 25° C:47A
- Rds On ( Max) @ Id, Vgs:96mOhm @ 20A, 15V
- Vgs(th) ( Max) @ Id:2.4V @ 5mA (Typ)
- Gate Charge ( Qg) ( Max) @ Vgs:-
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):15V
- Vgs ( Max):+21V, -8V
- EU RoHS Status:ROHS3 Compliant
- REACH Status:REACH Affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
P3M12080K4 provided by PN Junction Semiconductor
PN Junction Semiconductor was established in September 2018 as a leading brand in third-generation power semiconductor devices in China. The company's main products are automotive-grade silicon carbide MOSFETs, silicon carbide SBDs, and gallium nitride power devices. The company has the most comprehensive catalog of silicon carbide power devices in China, with silicon carbide MOSFETs and SBDs covering various voltage levels and current-carrying capacities, all of which have passed AEC-Q101 testing and certification, and can meet various application scenarios of customers.
Dr. Huang Xing, the founder of PN Junction Semiconductor, has been deeply involved in the design and development of silicon carbide and gallium nitride power devices since 2009, and has studied under Professor B. Jayant Baliga, the inventor of IGBT, and Professor Alex Huang, the inventor of thyristor. Currently, PN Junction Semiconductor has released more than 100 different models of silicon carbide diodes, silicon carbide MOSFETs, silicon carbide power modules, and GaN HEMT products on the 650V, 1200V, and 1700V voltage platforms. Mass-produced products have been widely used in electric vehicles, IT equipment power supplies, photovoltaic inverters, energy storage systems, industrial applications, and other fields, providing continuous and stable supply to Tier 1 manufacturers.
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