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Vishay Intertechnology SI2319DS-T1-GE3
MOSFET P-CH 40V 2.3A SOT23-3
Manufacturer # :SI2319DS-T1-GE3
Manufacturer :Vishay Intertechnology
Dasenic # :EF205C-DS
Datasheet :
SI2319DS-T1-GE3 Datasheet
SI2319DS-T1-GE3 DatasheetSample :
Customer # :
Description : MOSFET P-CH 40V 2.3A SOT23-3 SOT-23-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.056700 | $ 0.06 |
| 25+ | $ 0.054900 | $ 1.37 |
| 100+ | $ 0.052200 | $ 5.22 |
| 1000+ | $ 0.047700 | $ 47.7 |
| 3000+ | $ 0.043200 | $ 129.6 |
In Stock: 34976
MOQ :1 PCS
Packaging :SOT-23-3
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.0567
Total :$ 0.06
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3 (TO-236)
- Power Dissipation ( Max):750mW (Ta)
- F E T Type:P-Channel
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:2.3A (Ta)
- Rds On ( Max) @ Id, Vgs:82mOhm @ 3A, 10V
- Vgs(th) ( Max) @ Id:3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:17 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:470 pF @ 20 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- Series:TrenchFET®
- Base Product Number:SI2319
- Packaging:Dasenic-Reel®
- Packaging:Cut Tape (CT)
- Packaging:Tape & Reel (TR)
