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Alpha &Omega Semiconductor AO3418

Transistor: N-MOSFET; unipolar; 30V; 3.1A; 1.4W; SOT23
part number has RoHS
Manufacturer # :AO3418
Dasenic # :1DA321-DS
Customer # :
Description : Transistor: N-MOSFET; unipolar; 30V; 3.1A; 1.4W; SOT23 SOT-23-3L
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
5+$ 0.137700$ 0.69
25+$ 0.071600$ 1.79
100+$ 0.063300$ 6.33
500+$ 0.056900$ 28.45
3000+$ 0.053000$ 159
In Stock: 40628
MOQ :1 PCS
Packaging :SOT-23-3L
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.1377
Total :$ 0.14
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AO3418 information

Product Details
of AO3418 The AO3418 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Alpha & Omega Semiconductor. It is designed for low-voltage applications and is optimized for efficiency in power management. The device typically comes in a compact package, making it suitable for space-constrained designs. Functions - Power Switching: The AO3418 can be used to switch electrical power in various applications such as power supplies and voltage regulation circuits. - Current Control: It controls the flow of current in electronic circuits, allowing for precise regulation of output signals. - Amplification: Although primarily used for switching, MOSFETs like the AO3418 can also be used to amplify electrical signals. Applications - Power Management Circuits: Used in DC-DC converters, battery management systems, and load switches. - Computing Hardware: Applications in laptops and PCs for voltage regulation. - Consumer Electronics: Power supply solutions in smartphones, tablets, and other handheld devices. - Automotive Applications: Implemented in car power management systems. Alternative Parts - AO3401: A similar N-channel MOSFET with a lower on-resistance. - IRLML2502: An alternative MOSFET that offers comparable specifications for low-voltage applications. - BSS138: A smaller N-channel MOSFET suited for lower current applications. Embedded Modules The AO3418 may be used in various embedded modules for specific applications, such as: - Power supply modules in embedded systems. - Motor driver modules. - LED drivers integrated in printed circuit boards (PCBs). Related Q&A Q1: What are the key specifications of the AO3418 MOSFET? A1: The AO3418 features low on-resistance, a maximum drain-source voltage of around 30V, and a continuous drain current rating that supports efficient switching applications. Q2: In what types of circuits is the AO3418 commonly used? A2: The AO3418 is commonly used in power management circuits, including DC-DC converters, load switches, and various consumer electronic devices. Q3: Can the AO3418 be used in automotive applications? A3: Yes, the AO3418 is suitable for automotive applications where efficient power management and switching are required, such as in battery management systems. Q4: What are some alternatives to the AO3418 MOSFET? A4: Alternatives include the AO3401, which may offer different on-resistance characteristics, and other MOSFETs like the IRLML2502 or BSS138, depending on the specific needs of the application. Q5: What advantages does the AO3418 provide over traditional switching devices? A5: The AO3418 provides fast switching speeds, low on-resistance for improved efficiency, and the ability to handle high currents, which are significant advantages over traditional mechanical relays or older semiconductor technologies.
  • Alpha &Omega Semiconductor AO3418 technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Single MOSFETs
  • Product Status:Not For New Designs
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Technology:MOSFET (Metal Oxide)
  • Supplier Device Package:SOT-23-3
  • Power Dissipation ( Max):1.4W (Ta)
  • F E T Type:N-Channel
  • Drain to Source Voltage ( Vdss):30 V
  • Current - Continuous Drain ( Id) @ 25° C:3.8A (Ta)
  • Rds On ( Max) @ Id, Vgs:60mOhm @ 3.8A, 10V
  • Vgs(th) ( Max) @ Id:1.8V @ 250µA
  • Gate Charge ( Qg) ( Max) @ Vgs:3.2 nC @ 4.5 V
  • Input Capacitance ( Ciss) ( Max) @ Vds:270 pF @ 15 V
  • Drive Voltage ( Max Rds On, Min Rds On):2.5V, 10V
  • Vgs ( Max):±12V
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