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ROHM Semiconductor RGTH60TS65DGC13
194W 58A 650V Trench Field Stop TO-247GE IGBTs![part number has RoHS](/img/RoHS2.png)
Manufacturer # :RGTH60TS65DGC13
Manufacturer :ROHM Semiconductor
Dasenic # :F0F395-DS
Datasheet :
RGTH60TS65DGC13 Datasheet
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Description : 194W 58A 650V Trench Field Stop TO-247GE IGBTs TO-247GE
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25+ | $ 4.212000 | $ 105.3 |
100+ | $ 3.510000 | $ 351 |
250+ | $ 3.402000 | $ 850.5 |
In Stock: 3318
MOQ :1 PCS
Packaging :TO-247GE
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Shipping Origin :Shenzhen or Hong Kong Warehouse
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Active
- Operating Temperature:-40°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Input Type:Standard
- Power - Max:194 W
- Supplier Device Package:TO-247
- Reverse Recovery Time (trr):58 ns
- Current - Collector ( Ic) ( Max):58 A
- Voltage - Collector Emitter Breakdown ( Max):650 V
- I G B T Type:Trench Field Stop
- Vce(on) ( Max) @ Vge, Ic:2.1V @ 15V, 30A
- Current - Collector Pulsed ( Icm):120 A
- Gate Charge:58 nC
- Td (on/off) @ 25° C:27ns/105ns
- Test Condition:400V, 30A, 10Ohm, 15V