Images are for reference only.

Share

1 : $0.0000

First-time registration with orders over $2,000 receives a $100 coupon. Register Now !

Certifications for ISO9001
Certifications for ISO13485
Certifications for ISO45001
Certifications for ISO14001

SemiQ GPA030A135MN-FDR

IGBT 1350V 60A 329W TO3PN
part number has RoHS
Manufacturer # :GPA030A135MN-FDR
Manufacturer :SemiQ
Dasenic # :GPA030A135MN-FDR-DS
Customer # :
Description : IGBT 1350V 60A 329W TO3PN
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
In Stock: 25
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0
Total :$ 0.00
Delivery :
dhlupsfedex
Payment :
paypalwiretransferpaypal02paypal04

Help you to save your cost and time

Strict quality inspection and Reliable package for goods

Fast Reliable delivery to save time

Provide 365 days warranty after-sales service

GPA030A135MN-FDR information

  • SemiQ GPA030A135MN-FDR technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Transistors - IGBTs - Single
  • Product Status:Obsolete
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Input Type:Standard
  • Power - Max:329 W
  • Supplier Device Package:TO-3PN
  • Reverse Recovery Time (trr):450 ns
  • Current - Collector ( Ic) ( Max):60 A
  • Voltage - Collector Emitter Breakdown ( Max):1350 V
  • I G B T Type:Trench Field Stop
  • Vce(on) ( Max) @ Vge, Ic:2.4V @ 15V, 30A
  • Current - Collector Pulsed ( Icm):90 A
  • Switching Energy:4.4mJ (on), 1.18mJ (off)
  • Gate Charge:300 nC
  • Td (on/off) @ 25° C:30ns/145ns
  • Test Condition:600V, 30A, 5Ohm, 15V
  • EU RoHS Status:RoHS Compliant
  • REACH Status:Vendor is not defined
  • US ECCN:Provided as per user requirements
  • China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
GPA030A135MN-FDR provided by SemiQ
SemiQ Inc. is a US based developer and manufacturer of Silicon Carbide (SiC) power semiconductor devices and materials including:SiC Power MPS Diodes,SiC Modules,SiC Power MOSFETs,SiC Custom Modules,SiC Bare Die,SiC Custom N-Type Epi Wafers,etc. SemiQ is privately held and partially employee owned.SemiQ (previously known as Global Power Technologies Group) began developing Silicon Carbide technologies in 2012 at its headquarters in Southern California where it also grows Epi and designs devices.Recently, SemiQ released its Gen 3 SiC Schottky diodes (Merged PiN Schottky type) which included improvements in surge current, moisture resistance, and overall robustness and ruggedness. SemiQ products are deployed in EV charging systems, induction heating, power supplies, Fuel Cell power generation, and solar inverters around the world.Additionally, SemiQ offers power conversion application expertise and has extensive experience designing inverters of 3.3kW, 6.6kW and above. SemiQ's manufacturing and engineering facilities are located in Lake Forest, California. The company has a fully redundant SiC supply chain.
SemiQ Related product recommendations

We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.