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Rochester Electronics IPB80P03P4L04ATMA1
MOSFET P-CH 30V 80A TO263-3
Manufacturer # :IPB80P03P4L04ATMA1
Manufacturer :Rochester Electronics
Dasenic # :FBBC0B-DS
Datasheet :
IPB80P03P4L04ATMA1 Datasheet
IPB80P03P4L04ATMA1 DatasheetSample :
Customer # :
Description : MOSFET P-CH 30V 80A TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR)
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 6.340000 | $ 6.34 |
| 10+ | $ 5.580000 | $ 55.8 |
| 25+ | $ 5.040000 | $ 126 |
| 50+ | $ 4.500000 | $ 225 |
| 100+ | $ 3.920000 | $ 392 |
In Stock: 2909
MOQ :1 PCS
Packaging :TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR)
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 6.34
Total :$ 6.34
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Not For New Designs
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PG-TO263-3-2
- Power Dissipation ( Max):137W (Tc)
- F E T Type:P-Channel
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:80A (Tc)
- Rds On ( Max) @ Id, Vgs:4.1mOhm @ 80A, 10V
- Vgs(th) ( Max) @ Id:2V @ 253µA
- Gate Charge ( Qg) ( Max) @ Vgs:160 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:11300 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):+5V, -16V
- Series:OptiMOS™
- Base Product Number:IPB80P
- Packaging:Tape & Reel (TR)
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