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Vishay Intertechnology SQJ914EP-T1_GE3
MOSFET 2 N-CH 30V POWERPAK SO8
Manufacturer # :SQJ914EP-T1_GE3
Manufacturer :Vishay Intertechnology
Dasenic # :621E7C-DS
Datasheet :
SQJ914EP-T1_GE3 Datasheet
SQJ914EP-T1_GE3 DatasheetSample :
Customer # :
Description : MOSFET 2 N-CH 30V POWERPAK SO8 PowerPAK® SO-8 Dual Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.841100 | $ 8.41 |
| 3000+ | $ 0.467300 | $ 1401.9 |
| 6000+ | $ 0.445000 | $ 2670 |
| 9000+ | $ 0.424500 | $ 3820.5 |
In Stock: 10800
MOQ :1 PCS
Packaging :PowerPAK® SO-8 Dual Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.8411
Total :$ 0.84
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/FETs, MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8 Dual
- Technology:MOSFET (Metal Oxide)
- Power - Max:27W (Tc)
- Supplier Device Package:PowerPAK® SO-8 Dual
- Configuration:2 N-Channel (Dual)
- Drain to Source Voltage ( Vdss):30V
- Current - Continuous Drain ( Id) @ 25° C:30A (Tc)
- Rds On ( Max) @ Id, Vgs:12mOhm @ 4.5A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:25nC @ 10V
- Input Capacitance ( Ciss) ( Max) @ Vds:1110pF @ 15V
- Series:Automotive, AEC-Q101, TrenchFET®
- Base Product Number:SQJ914
- Packaging:Dasenic-Reel®
- Packaging:Cut Tape (CT)
- Packaging:Tape & Reel (TR)
