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Vishay Intertechnology SISH615ADN-T1-GE3
MOSFET P-CH 20V 22.1A/35A PPAK
Manufacturer # :SISH615ADN-T1-GE3
Manufacturer :Vishay Intertechnology
Dasenic # :6A760A-DS
Datasheet :
SISH615ADN-T1-GE3 Datasheet
SISH615ADN-T1-GE3 DatasheetSample :
Customer # :
Description : MOSFET P-CH 20V 22.1A/35A PPAK PowerPAK® 1212-8SH
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.513000 | $ 0.51 |
| 10+ | $ 0.442800 | $ 4.43 |
| 100+ | $ 0.306900 | $ 30.69 |
| 500+ | $ 0.256500 | $ 128.25 |
| 1000+ | $ 0.218700 | $ 218.7 |
In Stock: 29588
MOQ :1 PCS
Packaging :PowerPAK® 1212-8SH
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.513
Total :$ 0.51
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:PowerPAK® 1212-8SH
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 1212-8SH
- Power Dissipation ( Max):3.7W (Ta), 52W (Tc)
- F E T Type:P-Channel
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:22.1A (Ta), 35A (Tc)
- Rds On ( Max) @ Id, Vgs:4.4mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:1.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:183 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:5590 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 10V
- Vgs ( Max):±12V
