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Vishay Intertechnology SISH114ADN-T1-GE3
MOSFET N-CH 30V 18A/35A PPAK
Manufacturer # :SISH114ADN-T1-GE3
Manufacturer :Vishay Intertechnology
Dasenic # :DC0C3A-DS
Datasheet :
SISH114ADN-T1-GE3 Datasheet
SISH114ADN-T1-GE3 DatasheetSample :
Customer # :
Description : MOSFET N-CH 30V 18A/35A PPAK PowerPAK® 1212-8SH Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.567000 | $ 0.57 |
| 10+ | $ 0.500400 | $ 5 |
| 100+ | $ 0.344700 | $ 34.47 |
| 500+ | $ 0.301500 | $ 150.75 |
| 1000+ | $ 0.268200 | $ 268.2 |
In Stock: 12931
MOQ :1 PCS
Packaging :PowerPAK® 1212-8SH Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.567
Total :$ 0.57
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8SH
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 1212-8SH
- Power Dissipation ( Max):3.7W (Ta), 39W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:18A (Ta), 35A (Tc)
- Rds On ( Max) @ Id, Vgs:7.5mOhm @ 18A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:32 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1230 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- Series:TrenchFET®
- Base Product Number:SISH114
- Packaging:Dasenic-Reel®
- Packaging:Cut Tape (CT)
- Packaging:Tape & Reel (TR)
