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Vishay Intertechnology SIHB35N60E-GE3
MOSFET N-CH 650V 32A D2PAK
Manufacturer # :SIHB35N60E-GE3
Manufacturer :Vishay Intertechnology
Dasenic # :803A1D-DS
Datasheet :
SIHB35N60E-GE3 Datasheet
SIHB35N60E-GE3 DatasheetSample :
Customer # :
Description : MOSFET N-CH 650V 32A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Tube
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 5.544000 | $ 5.54 |
| 10+ | $ 4.652100 | $ 46.52 |
| 100+ | $ 3.763300 | $ 376.33 |
| 500+ | $ 3.345100 | $ 1672.55 |
| 1000+ | $ 2.864300 | $ 2864.3 |
In Stock: 5616
MOQ :1 PCS
Packaging :TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Tube
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 5.544
Total :$ 5.54
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:D²PAK (TO-263)
- Power Dissipation ( Max):250W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:32A (Tc)
- Rds On ( Max) @ Id, Vgs:94mOhm @ 17A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:132 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2760 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- Base Product Number:SIHB35
- Packaging:Tube
