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Vishay Intertechnology SIA415DJ-T1-GE3
MOSFET P-CH 20V 12A PPAK SC70-6![part number has RoHS](/img/RoHS2.png)
Manufacturer # :SIA415DJ-T1-GE3
Manufacturer :Vishay Intertechnology
Dasenic # :EEB898-DS
Datasheet :
SIA415DJ-T1-GE3 Datasheet
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Description : MOSFET P-CH 20V 12A PPAK SC70-6 PowerPAK® SC-70-6
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Quantity | Unit Price | Total |
10+ | $ 1.150200 | $ 11.5 |
3000+ | $ 0.766800 | $ 2300.4 |
In Stock: 88
MOQ :1 PCS
Packaging :PowerPAK® SC-70-6
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 1.1502
Total :$ 1.15
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:PowerPAK® SC-70-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SC-70-6
- Power Dissipation ( Max):3.5W (Ta), 19W (Tc)
- F E T Type:P-Channel
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:12A (Tc)
- Rds On ( Max) @ Id, Vgs:35mOhm @ 5.6A, 4.5V
- Vgs(th) ( Max) @ Id:1.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:47 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1250 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±12V