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Vishay Intertechnology SI7960DP-T1-E3
MOSFET 2N-CH 60V 6.2A PPAK SO-8![part number has RoHS](/img/RoHS2.png)
Manufacturer # :SI7960DP-T1-E3
Manufacturer :Vishay Intertechnology
Dasenic # :268EA1-DS
Datasheet :
SI7960DP-T1-E3 Datasheet
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Description : MOSFET 2N-CH 60V 6.2A PPAK SO-8 PowerPAK® SO-8 Dual
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Quantity | Unit Price | Total |
1+ | $ 5.660000 | $ 5.66 |
In Stock: 765
MOQ :1 PCS
Packaging :PowerPAK® SO-8 Dual
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price : $ 5.66
Total :$ 5.66
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- Category:Discrete Semiconductor Devices/FETs, MOSFETs
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:PowerPAK® SO-8 Dual
- Power - Max:1.4W
- Supplier Device Package:PowerPAK® SO-8 Dual
- F E T Type:2 N-Channel (Dual)
- F E T Feature:Logic Level Gate
- Drain to Source Voltage ( Vdss):60V
- Current - Continuous Drain ( Id) @ 25° C:6.2A
- Rds On ( Max) @ Id, Vgs:21mOhm @ 9.7A, 10V
- Vgs(th) ( Max) @ Id:3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:75nC @ 10V