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1 : $1.5669
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Vishay Intertechnology SI7898DP-T1-GE3
MOSFET N-CH 150V 3A PPAK SO-8
Manufacturer # :SI7898DP-T1-GE3
Manufacturer :Vishay Intertechnology
Dasenic # :060A10-DS
Datasheet :
SI7898DP-T1-GE3 Datasheet
SI7898DP-T1-GE3 DatasheetSample :
Customer # :
Description : MOSFET N-CH 150V 3A PPAK SO-8 PowerPAK-SO-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.566900 | $ 15.67 |
| 3000+ | $ 0.870500 | $ 2611.5 |
| 6000+ | $ 0.837700 | $ 5026.2 |
| 9000+ | $ 0.810000 | $ 7290 |
In Stock: 28800
MOQ :1 PCS
Packaging :PowerPAK-SO-8
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 1.5669
Total :$ 1.57
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):1.9W (Ta)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):150 V
- Current - Continuous Drain ( Id) @ 25° C:3A (Ta)
- Rds On ( Max) @ Id, Vgs:85mOhm @ 3.5A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:21 nC @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):6V, 10V
- Vgs ( Max):±20V
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