Name: SI7252DP-T1-GE3
Brand: Vishay
SKU: DS-6117942
Price: 1.4216 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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Vishay SI7252DP-T1-GE3

MOSFET 2N-CH 100V 36.7A PPAK 8SO

Manufacturer # :SI7252DP-T1-GE3

Manufacturer :Vishay

Dasenic # :SI7252DP-T1-GE3-DS

Datasheet :

SI7252DP-T1-GE3 Datasheet

Customer # :

Description : MOSFET 2N-CH 100V 36.7A PPAK 8SO

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Quantity	Unit Price	Total
10+	$ 1.4216	$ 14.22
3000+	$ 0.7898	$ 2369.4
6000+	$ 0.7749	$ 4649.4
12000+	$ 0.7627	$ 9152.4
18000+	$ 0.7500	$ 13500

In Stock: 58417

MOQ :1 PCS

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Delivery Time :Ship Within 48 Hours

Shipping Origin :Shenzhen or Hong Kong Warehouse

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Unit Price :$ 1.4216

Total :$ 1.42

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Vishay SI7252DP-T1-GE3 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SO-8 Dual
Power - Max:46W
Supplier Device Package:PowerPAK® SO-8 Dual
F E T Type:2 N-Channel (Dual)
F E T Feature:Logic Level Gate
Drain to Source Voltage ( Vdss):100V
Current - Continuous Drain ( Id) @ 25° C:36.7A
Rds On ( Max) @ Id, Vgs:18mOhm @ 15A, 10V
Vgs(th) ( Max) @ Id:3.5V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:27nC @ 10V
Input Capacitance ( Ciss) ( Max) @ Vds:1170pF @ 50V
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
US ECCN:EAR99
HTS US:8541.29.0095
REACH Status:REACH is not affected
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for Vishay SI7252DP-T1-GE3
Datasheet:
SI7252DP-T1-GE3

Vishay SI7252DP-T1-GE3 Environmental and export classification status description
The SI7252DP-T1-GE3 is a high-speed, N-channel MOSFET specifically designed for power management and switching applications. It is part of Vishay's range of discrete semiconductor devices and is known for its low on-state resistance and fast switching capabilities. Functions 1. Switching Device: Acts as a switch in electronic circuits to turn current on/off. 2. Signal Amplification: Can amplify weak signals in analog applications. 3. Load Management: Efficiently manages and distributes power in systems. Applications 1. Power Supply Circuits: Used in power converters and regulators. 2. Motor Control: Suitable for driving and controlling motors in robotics and industrial applications. 3. LED Drivers: Often used in high-efficiency LED lighting solutions. 4. Switching Regulator Circuits: Integral in the design of DC-DC converters. Alternative Parts 1. IRF3205PBF: Another N-channel MOSFET with similar specifications. 2. STP16NF06L: A comparable MOSFET made by STMicroelectronics. 3. BSS138: A smaller N-channel MOSFET used for similar applications but with different specifications. Embedded Modules - Power Management ICs (PMICs): Integrate MOSFETs like the SI7252 with other power management functions. - Motor Driver Modules: Use MOSFETs for H-bridge configurations for driving various types of motors. Related Q&A Q1: What is the maximum gate-source voltage for the SI7252DP-T1-GE3? A1: The maximum gate-source voltage (Vgs) for the SI7252DP-T1-GE3 is +/-20V. Q2: What are the main advantages of using the SI7252DP-T1-GE3 in circuits? A2: The main advantages include low on-resistance, high-speed switching capabilities, and excellent thermal performance, making it suitable for a variety of power management applications. Q3: Can the SI7252DP-T1-GE3 be used in high temperature environments? A3: Yes, the SI7252DP-T1-GE3 is rated for a maximum junction temperature of 150°C, which allows it to operate effectively in high temperature environments. Q4: What types of loads can the SI7252DP-T1-GE3 switch? A4: This MOSFET can switch both resistive and inductive loads, including motors and relays, due to its fast switching characteristics. Q5: How does the SI7252DP-T1-GE3 compare to other MOSFETs in its category? A5: The SI7252DP-T1-GE3 has a low on-resistance (Rds(on)) compared to many other MOSFETs, which means it produces less heat during operation and provides better energy efficiency, making it an attractive choice for power applications.

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Q: What is the warranty period for the SI7252DP-T1-GE3?

A: We offer a 1-year warranty on the SI7252DP-T1-GE3. This warranty covers any defects in materials and artistry under normal use. During the warranty period, if the product is found to be defective, it will be repaired or replaced at no charge. For further details, please refer to our warranty policy.

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Q: What is the return or replacement process for SI7252DP-T1-GE3?

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- The defect must be reported within 365 days after delivery.

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SI7252DP-T1-GE3 provided by Vishay

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader.