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Vishay Intertechnology SI5403DC-T1-GE3
MOSFET P-CH 30V 6A 1206-8
Manufacturer # :SI5403DC-T1-GE3
Manufacturer :Vishay Intertechnology
Dasenic # :5B2835-DS
Datasheet :
SI5403DC-T1-GE3 Datasheet
SI5403DC-T1-GE3 DatasheetSample :
Customer # :
Description : MOSFET P-CH 30V 6A 1206-8 ChipFET1206-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.621000 | $ 6.21 |
| 3000+ | $ 0.345000 | $ 1035 |
| 6000+ | $ 0.330800 | $ 1984.8 |
| 9000+ | $ 0.316700 | $ 2850.3 |
| 24000+ | $ 0.313500 | $ 7524 |
In Stock: 16198
MOQ :1 PCS
Packaging :ChipFET1206-8
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.621
Total :$ 0.62
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:8-SMD, Flat Lead
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:1206-8 ChipFET™
- Power Dissipation ( Max):2.5W (Ta), 6.3W (Tc)
- F E T Type:P-Channel
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:6A (Tc)
- Rds On ( Max) @ Id, Vgs:30mOhm @ 7.2A, 10V
- Vgs(th) ( Max) @ Id:3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:42 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1340 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
