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Vishay Intertechnology SI4178DY-T1-GE3
MOSFET N-CH 30V 12A 8SO
SI4178DY-T1-GE3 Datasheet| Quantity | Unit Price | Total |
| 10+ | $ 0.354400 | $ 3.54 |
| 2500+ | $ 0.196900 | $ 492.25 |
| 5000+ | $ 0.185800 | $ 929 |
| 7500+ | $ 0.174600 | $ 1309.5 |
| 10000+ | $ 0.157500 | $ 1575 |
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOIC
- Power Dissipation ( Max):2.4W (Ta), 5W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:12A (Tc)
- Rds On ( Max) @ Id, Vgs:21mOhm @ 8.4A, 10V
- Vgs(th) ( Max) @ Id:2.8V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:12 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:405 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±25V
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