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Vishay Intertechnology SI2335DS-T1-GE3
MOSFET P-CH 12V 3.2A SOT23-3
Manufacturer # :SI2335DS-T1-GE3
Manufacturer :Vishay Intertechnology
Dasenic # :F21AC8-DS
Datasheet :
SI2335DS-T1-GE3 Datasheet
SI2335DS-T1-GE3 DatasheetSample :
Customer # :
Description : MOSFET P-CH 12V 3.2A SOT23-3 TO-236-3, SC-59, SOT-23-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.820400 | $ 8.2 |
| 3000+ | $ 0.546900 | $ 1640.7 |
| 6000+ | $ 0.518100 | $ 3108.6 |
| 9000+ | $ 0.479800 | $ 4318.2 |
| 30000+ | $ 0.472100 | $ 14163 |
In Stock: 20
MOQ :1 PCS
Packaging :TO-236-3, SC-59, SOT-23-3
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.8204
Total :$ 0.82
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3 (TO-236)
- Power Dissipation ( Max):750mW (Ta)
- F E T Type:P-Channel
- Drain to Source Voltage ( Vdss):12 V
- Current - Continuous Drain ( Id) @ 25° C:3.2A (Ta)
- Rds On ( Max) @ Id, Vgs:51mOhm @ 4A, 4.5V
- Vgs(th) ( Max) @ Id:450mV @ 250µA (Min)
- Gate Charge ( Qg) ( Max) @ Vgs:15 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1225 pF @ 6 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
