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Toshiba RN2106MFV,L3XHF(CT
AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER
Manufacturer # :RN2106MFV,L3XHF(CT
Manufacturer :Toshiba
Dasenic # :4411A6-DS
Datasheet :
RN2106MFV,L3XHF(CT Datasheet
RN2106MFV,L3XHF(CT DatasheetSample :
Customer # :
Description : AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER SOT-723
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.288000 | $ 0.29 |
| 10+ | $ 0.198900 | $ 1.99 |
| 100+ | $ 0.081000 | $ 8.1 |
| 1000+ | $ 0.049500 | $ 49.5 |
| 2500+ | $ 0.046800 | $ 117 |
In Stock: 19049
MOQ :1 PCS
Packaging :SOT-723
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.288
Total :$ 0.29
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single, Pre-Biased Bipolar Transistors
- Product Status:Active
- Package / Case:SOT-723
- Power - Max:150 mW
- Supplier Device Package:VESM
- Transistor Type:PNP - Pre-Biased
- Current - Collector ( Ic) ( Max):100 mA
- Voltage - Collector Emitter Breakdown ( Max):50 V
- Vce Saturation ( Max) @ Ib, Ic:300mV @ 500µA, 5mA
- Current - Collector Cutoff ( Max):500nA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:80 @ 10mA, 5V
- Frequency - Transition:250 MHz
- Resistor - Base ( R1):4.7 kOhms
- Resistor - Emitter Base ( R2):47 kOhms
