![](https://assets.dasenic.com/product/3DXTECH/8-Power%2520TDFN.jpg)
Images are for reference only.
1 : $1.0080
First-time registration with orders over $2,000 receives a $100 coupon. Register Now !
Texas Instruments CSD16403Q5A
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.7 mOhm![part number has RoHS](/img/RoHS2.png)
Manufacturer # :CSD16403Q5A
Manufacturer :Texas Instruments
Dasenic # :1D00D5-DS
Datasheet :
CSD16403Q5A Datasheet
![pdf download](/img/pdf.png)
Sample :
Customer # :
Description : 25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.7 mOhm 8-PowerTDFN
Pricing (USD) : *To apply for a price, please click the Send Target Price button
Quantity | Unit Price | Total |
1+ | $ 1.008000 | $ 1.01 |
10+ | $ 0.836100 | $ 8.36 |
100+ | $ 0.666000 | $ 66.6 |
500+ | $ 0.601200 | $ 300.6 |
2500+ | $ 0.600300 | $ 1500.75 |
In Stock: 15000
MOQ :1 PCS
Packaging :8-PowerTDFN
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 1.008
Total :$ 1.01
Delivery : ![dhl](/img/dhl.png)
![ups](/img/ups.png)
![fedex](/img/fedex.png)
![dhl](/img/dhl.png)
![ups](/img/ups.png)
![fedex](/img/fedex.png)
Payment :![paypal](/img/paypal.webp)
![stripe](/img/stripe.png)
![wiretransfer](/img/wiretransfer.png)
![paypal02](/img/paypal02.webp)
![paypal04](/img/paypal04.webp)
![paypal](/img/paypal.webp)
![stripe](/img/stripe.png)
![wiretransfer](/img/wiretransfer.png)
![paypal02](/img/paypal02.webp)
![paypal04](/img/paypal04.webp)
Help you to save your cost and time.
Strict quality inspection and Reliable package for goods.
Fast Reliable delivery to save time.
Provide 365 days warranty after-sales service
- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:8-PowerTDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-VSONP (5x6)
- Power Dissipation ( Max):3.1W (Ta)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):25 V
- Current - Continuous Drain ( Id) @ 25° C:28A (Ta), 100A (Tc)
- Rds On ( Max) @ Id, Vgs:2.8mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:1.9V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:18 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2660 pF @ 12.5 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):+16V, -12V