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STMicroelectronics STGB30M65DF2
258W 60A 650V Trench Field Stop D2PAK IGBTs![part number has RoHS](/img/RoHS2.png)
Manufacturer # :STGB30M65DF2
Manufacturer :STMicroelectronics
Dasenic # :EBC39D-DS
Datasheet :
STGB30M65DF2 Datasheet
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Description : 258W 60A 650V Trench Field Stop D2PAK IGBTs D2PAK
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1000+ | $ 1.131400 | $ 1131.4 |
2000+ | $ 1.075600 | $ 2151.2 |
5000+ | $ 1.035600 | $ 5178 |
In Stock: 37200
MOQ :1 PCS
Packaging :D2PAK
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Input Type:Standard
- Power - Max:258 W
- Supplier Device Package:D2PAK (TO-263)
- Reverse Recovery Time (trr):140 ns
- Current - Collector ( Ic) ( Max):60 A
- Voltage - Collector Emitter Breakdown ( Max):650 V
- I G B T Type:Trench Field Stop
- Vce(on) ( Max) @ Vge, Ic:2V @ 15V, 30A
- Current - Collector Pulsed ( Icm):120 A
- Switching Energy:300µJ (on), 960µJ (off)
- Gate Charge:80 nC
- Td (on/off) @ 25° C:31.6ns/115ns
- Test Condition:400V, 30A, 10Ohm, 15V