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STMicroelectronics STB36N60M6
MOSFET N-CH 600V 30A D2PAK
Manufacturer # :STB36N60M6
Manufacturer :STMicroelectronics
Dasenic # :1F27C0-DS
Datasheet :
STB36N60M6 Datasheet
STB36N60M6 DatasheetSample :
Customer # :
Description : MOSFET N-CH 600V 30A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 5.067000 | $ 5.07 |
| 10+ | $ 4.257000 | $ 42.57 |
| 25+ | $ 3.465000 | $ 86.63 |
| 100+ | $ 3.060000 | $ 306 |
| 250+ | $ 3.042000 | $ 760.5 |
In Stock: 6000
MOQ :1 PCS
Packaging :TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 5.067
Total :$ 5.07
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:D2PAK (TO-263)
- Power Dissipation ( Max):208W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:30A (Tc)
- Rds On ( Max) @ Id, Vgs:99mOhm @ 15A, 10V
- Vgs(th) ( Max) @ Id:4.75V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:44.3 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1960 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±25V
