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ROHM Semiconductor RQ6E045RPTR
MOSFET RQ6E045RP is the low on - resistance MOSFET, built-in G-S protection diode for switching application.
Manufacturer # :RQ6E045RPTR
Manufacturer :ROHM Semiconductor
Dasenic # :6618F3-DS
Datasheet :
RQ6E045RPTR Datasheet
RQ6E045RPTR DatasheetSample :
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Description : MOSFET RQ6E045RP is the low on - resistance MOSFET, built-in G-S protection diode for switching application. SC-95
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 5+ | $ 0.452700 | $ 2.26 |
| 50+ | $ 0.220500 | $ 11.03 |
| 100+ | $ 0.201600 | $ 20.16 |
In Stock: 12390
MOQ :1 PCS
Packaging :SC-95
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.4527
Total :$ 0.45
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Package / Case:SOT-23-6 Thin, TSOT-23-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TSMT6 (SC-95)
- Power Dissipation ( Max):950mW (Ta)
- F E T Type:P-Channel
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:4.5A (Ta)
- Rds On ( Max) @ Id, Vgs:35mOhm @ 4.5A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:14 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1350 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):4V, 10V
- Vgs ( Max):±20V
