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ROHM Semiconductor R6009KNXC7G
600V 9A TO-220FM, HIGH-SPEED SWI
R6009KNXC7G Datasheet| Quantity | Unit Price | Total |
| 1+ | $ 1.413000 | $ 1.41 |
| 10+ | $ 0.945000 | $ 9.45 |
| 50+ | $ 0.879300 | $ 43.97 |
| 100+ | $ 0.740700 | $ 74.07 |
| 200+ | $ 0.700200 | $ 140.04 |
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3 Full Pack
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220FM
- Power Dissipation ( Max):48W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:9A (Ta)
- Rds On ( Max) @ Id, Vgs:535mOhm @ 2.8A, 10V
- Vgs(th) ( Max) @ Id:5V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:16.5 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:540 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
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