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Rochester Electronics HGT1S15N120C3S
35A, 1200V, N-CHANNEL IGBT
Manufacturer # :HGT1S15N120C3S
Manufacturer :Rochester Electronics
Dasenic # :258658-DS
Datasheet :
HGT1S15N120C3S Datasheet
HGT1S15N120C3S DatasheetSample :
Customer # :
Description : 35A, 1200V, N-CHANNEL IGBT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Bulk
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 3.654000 | $ 3.65 |
| 25+ | $ 3.582000 | $ 89.55 |
| 100+ | $ 3.438000 | $ 343.8 |
| 500+ | $ 3.294000 | $ 1647 |
| 1000+ | $ 3.105000 | $ 3105 |
In Stock: 4170
MOQ :1 PCS
Packaging :TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Bulk
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 3.654
Total :$ 3.65
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Input Type:Standard
- Power - Max:164 W
- Supplier Device Package:TO-263AB
- Current - Collector ( Ic) ( Max):35 A
- Voltage - Collector Emitter Breakdown ( Max):1200 V
- Vce(on) ( Max) @ Vge, Ic:3.5V @ 15V, 15A
- Current - Collector Pulsed ( Icm):120 A
- Gate Charge:100 nC
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