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Rochester Electronics FQNL2N50BTA
POWER FIELD-EFFECT TRANSISTOR, 0
FQNL2N50BTA Datasheet| Quantity | Unit Price | Total |
| 1+ | $ 0.258400 | $ 0.26 |
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-92-3
- Power Dissipation ( Max):1.5W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):500 V
- Current - Continuous Drain ( Id) @ 25° C:350mA (Tc)
- Rds On ( Max) @ Id, Vgs:5.3Ohm @ 175mA, 10V
- Vgs(th) ( Max) @ Id:3.7V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:8 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:230 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- Series:QFET®
- Base Product Number:FQNL2
- Packaging:Bulk
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