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Rochester Electronics FQB34N20TM
N-CHANNEL POWER MOSFET![part number has RoHS](/img/RoHS2.png)
Manufacturer # :FQB34N20TM
Manufacturer :Rochester Electronics
Dasenic # :B1FCFE-DS
Datasheet :
FQB34N20TM Datasheet
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Description : N-CHANNEL POWER MOSFET TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Bulk
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Quantity | Unit Price | Total |
1+ | $ 2.466000 | $ 2.47 |
25+ | $ 2.421000 | $ 60.53 |
100+ | $ 2.322000 | $ 232.2 |
500+ | $ 2.223000 | $ 1111.5 |
1000+ | $ 2.097000 | $ 2097 |
In Stock: 5538
MOQ :1 PCS
Packaging :TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Bulk
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 2.466
Total :$ 2.47
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:D2PAK (TO-263)
- Power Dissipation ( Max):3.13W (Ta), 180W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):200 V
- Current - Continuous Drain ( Id) @ 25° C:31A (Tc)
- Rds On ( Max) @ Id, Vgs:75mOhm @ 15.5A, 10V
- Vgs(th) ( Max) @ Id:5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:78 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:3100 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- Series:QFET®
- Packaging:Bulk