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Onsemi FQA9N90C-F109
FQA9N90C_F109 - Power MOSFET, N-Channel, QFET, 900V, 9.0A
Manufacturer # :FQA9N90C-F109
Manufacturer :Onsemi
Dasenic # :93A5BF-DS
Datasheet :
FQA9N90C-F109 Datasheet
FQA9N90C-F109 DatasheetSample :
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Description : FQA9N90C_F109 - Power MOSFET, N-Channel, QFET, 900V, 9.0A TO-3P-3
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| Quantity | Unit Price | Total |
| 1+ | $ 0.594000 | $ 0.59 |
In Stock: 1675
MOQ :1 PCS
Packaging :TO-3P-3
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.594
Total :$ 0.59
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-3P
- Power Dissipation ( Max):280W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):900 V
- Current - Continuous Drain ( Id) @ 25° C:9A (Tc)
- Rds On ( Max) @ Id, Vgs:1.4Ohm @ 4.5A, 10V
- Vgs(th) ( Max) @ Id:5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:58 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2730 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- Series:QFET®
- Base Product Number:FQA9
