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Onsemi FGH50T65SQD-F155
268W 100A 650V Trench Field Stop TO-247 IGBTs
Manufacturer # :FGH50T65SQD-F155
Manufacturer :Onsemi
Dasenic # :C87F49-DS
Datasheet :
FGH50T65SQD-F155 Datasheet
FGH50T65SQD-F155 DatasheetSample :
Customer # :
Description : 268W 100A 650V Trench Field Stop TO-247 IGBTs TO-247
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 3.951000 | $ 3.95 |
| 30+ | $ 3.132300 | $ 93.97 |
| 120+ | $ 2.684900 | $ 322.19 |
| 510+ | $ 2.386500 | $ 1217.12 |
| 1020+ | $ 2.043500 | $ 2084.37 |
In Stock: 1772
MOQ :1 PCS
Packaging :TO-247
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 3.951
Total :$ 3.95
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Payment :
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Input Type:Standard
- Power - Max:268 W
- Supplier Device Package:TO-247-3
- Reverse Recovery Time (trr):31 ns
- Current - Collector ( Ic) ( Max):100 A
- Voltage - Collector Emitter Breakdown ( Max):650 V
- I G B T Type:Trench Field Stop
- Vce(on) ( Max) @ Vge, Ic:2.1V @ 15V, 50A
- Current - Collector Pulsed ( Icm):200 A
- Switching Energy:180µJ (on), 45µJ (off)
- Gate Charge:99 nC
- Td (on/off) @ 25° C:22ns/105ns
- Test Condition:400V, 12.5A, 4.7Ohm, 15V
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