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Rochester Electronics BUZ73AE3046
BUZ73 - Power Field-Effect Transistor, 5.5A, 200V, 0.6ohm, N-Channel, MOSFET
Manufacturer # :BUZ73AE3046
Manufacturer :Rochester Electronics
Dasenic # :F341AC-DS
Datasheet :
BUZ73AE3046 Datasheet
BUZ73AE3046 DatasheetSample :
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Description : BUZ73 - Power Field-Effect Transistor, 5.5A, 200V, 0.6ohm, N-Channel, MOSFET - Bulk
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.409500 | $ 0.41 |
| 25+ | $ 0.401300 | $ 10.03 |
| 100+ | $ 0.384900 | $ 38.49 |
| 500+ | $ 0.368600 | $ 184.3 |
| 1000+ | $ 0.348100 | $ 348.1 |
In Stock: 2000
MOQ :1 PCS
Packaging :- Bulk
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.4095
Total :$ 0.41
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PG-TO220-3-1
- Power Dissipation ( Max):40W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):200 V
- Current - Continuous Drain ( Id) @ 25° C:5.5A (Tc)
- Rds On ( Max) @ Id, Vgs:600mOhm @ 4.5A, 10V
- Vgs(th) ( Max) @ Id:4V @ 1mA
- Input Capacitance ( Ciss) ( Max) @ Vds:530 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- Series:SIPMOS®
