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Rochester Electronics 2SB601-AZ
2SB601 - PNP SILICON EPITAXIAL T
Manufacturer # :2SB601-AZ
Manufacturer :Rochester Electronics
Dasenic # :A21A46-DS
Datasheet :
2SB601-AZ Datasheet
2SB601-AZ DatasheetSample :
Customer # :
Description : 2SB601 - PNP SILICON EPITAXIAL T TO-220-3 Bulk
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.359000 | $ 1.36 |
| 25+ | $ 1.332000 | $ 33.3 |
| 100+ | $ 1.278000 | $ 127.8 |
| 500+ | $ 1.224000 | $ 612 |
| 1000+ | $ 1.161000 | $ 1161 |
In Stock: 13359
MOQ :1 PCS
Packaging :TO-220-3 Bulk
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 1.359
Total :$ 1.36
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single, Pre-Biased Bipolar Transistors
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Power - Max:1.5 W
- Supplier Device Package:TO-220AB
- Transistor Type:PNP - Darlington
- Current - Collector ( Ic) ( Max):5 A
- Voltage - Collector Emitter Breakdown ( Max):100 V
- Vce Saturation ( Max) @ Ib, Ic:1.5V @ 3mA, 3A
- Current - Collector Cutoff ( Max):10µA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:2000 @ 3A, 2V
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