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Onsemi 2N3906TAR
40V 625mW 100@10mA,1V 200mA PNP TO-92-3 Bipolar Transistors - BJT
Manufacturer # :2N3906TAR
Manufacturer :Onsemi
Dasenic # :5E5BEA-DS
Datasheet :
2N3906TAR Datasheet
2N3906TAR DatasheetSample :
Customer # :
Description : 40V 625mW 100@10mA,1V 200mA PNP TO-92-3 Bipolar Transistors - BJT TO-92-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.063200 | $ 0.63 |
| 2000+ | $ 0.042100 | $ 84.2 |
| 10000+ | $ 0.032700 | $ 327 |
| 24000+ | $ 0.031300 | $ 751.2 |
| 50000+ | $ 0.029200 | $ 1460 |
In Stock: 29000
MOQ :1 PCS
Packaging :TO-92-3
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.0632
Total :$ 0.06
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single, Pre-Biased Bipolar Transistors
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Power - Max:625 mW
- Supplier Device Package:TO-92-3
- Transistor Type:PNP
- Current - Collector ( Ic) ( Max):200 mA
- Voltage - Collector Emitter Breakdown ( Max):40 V
- Vce Saturation ( Max) @ Ib, Ic:400mV @ 5mA, 50mA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:100 @ 10mA, 1V
- Frequency - Transition:250MHz
- Base Product Number:2N3906
- Packaging:Cut Tape (CT)
- Packaging:Tape & Box (TB)
