Name: SMMBFJ175LT1G
Brand: Onsemi
SKU: DS-6245309
Price: 0.414 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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1 : $0.4140

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Onsemi SMMBFJ175LT1G

TRANS JFET P-CH 30V SOT23

Manufacturer # :SMMBFJ175LT1G

Manufacturer :Onsemi

Dasenic # :SMMBFJ175LT1G-DS

Datasheet :

SMMBFJ175LT1G Datasheet

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Description : TRANS JFET P-CH 30V SOT23

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Quantity	Unit Price	Total
1+	$ 0.4140	$ 0.41
10+	$ 0.3096	$ 3.1
100+	$ 0.1728	$ 17.28
1000+	$ 0.1287	$ 128.7
3000+	$ 0.0900	$ 270

In Stock: 15790

MOQ :1 PCS

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Delivery Time :Ship Within 48 Hours

Shipping Origin :Shenzhen or Hong Kong Warehouse

Quantity :

Unit Price :$ 0.414

Total :$ 0.41

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SMMBFJ175LT1G information

Onsemi SMMBFJ175LT1G technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - JFETs
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Power - Max:225 mW
Supplier Device Package:SOT-23-3 (TO-236)
F E T Type:P-Channel
Drain to Source Voltage ( Vdss):-
Input Capacitance ( Ciss) ( Max) @ Vds:11pF @ 10V (VGS)
Voltage - Breakdown ( V( B R) G S S):30 V
Current - Drain ( Idss) @ Vds ( Vgs=0):7 mA @ 15 V
Current Drain ( Id) - Max:-
Voltage - Cutoff ( V G S off) @ Id:3 V @ 10 nA
Resistance - R D S( On):125 Ohms
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for Onsemi SMMBFJ175LT1G
Datasheet:
SMMBFJ175LT1G,

Onsemi SMMBFJ175LT1G Environmental and export classification status description
The Onsemi SMMBFJ175LT1G is a field effect transistor (FET) in a SOT-23 package. It is categorized under Discrete Semiconductor Devices and is designed for applications requiring low power and high input impedance. Functions: 1. Amplification: The SMMBFJ175LT1G can amplify and control electrical signals. 2. Switching: It can be used to switch electronic circuits on or off. 3. Signal Processing: It is suitable for signal processing applications due to its low power consumption. Applications: 1. Low-noise amplifiers 2. Switching circuits 3. Oscillator circuits 4. RF applications 5. Signal processing circuits Alternative Components: 1. Fairchild J175 2. NXP BF862 3. Diodes Inc. ZXMN4A06G Embedded Modules: The Onsemi SMMBFJ175LT1G can be integrated into larger electronic modules for various applications like RF modules, amplifier modules, and signal processing modules. Related Q&A: 1. What is the maximum power dissipation of the SMMBFJ175LT1G? - The maximum power dissipation of the SMMBFJ175LT1G is typically around 250mW. 2. What is the typical input capacitance of this FET? - The typical input capacitance of the SMMBFJ175LT1G is around 2 pF. 3. Is this FET suitable for high-frequency applications? - Yes, the SMMBFJ175LT1G is suitable for high-frequency applications due to its low input capacitance and high input impedance. 4. What is the drain-source voltage rating of the SMMBFJ175LT1G? - The drain-source voltage rating of the SMMBFJ175LT1G is typically around 32V. 5. Can the SMMBFJ175LT1G be used in low-power sensor applications? - Yes, the SMMBFJ175LT1G is suitable for low-power sensor applications due to its low power consumption and high input impedance.

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SMMBFJ175LT1G provided by Onsemi

Founded in 1999,ON Semiconductor (Nasdaq: ON) focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. Onsemi offers a diverse portfolio of semiconductor products, including Discrete & Power Modules,Power Management, Signal Conditioning & Control, Sensors, Motor Control, Custom & ASSP, Interfaces, Wireless Connectivity, Timing, Logic & Memory. With a highly differentiated and innovative product portfolio, onsemi creates intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way in creating a safer, cleaner, and smarter world. Headquartered in Arizona, USA, the company has a robust infrastructure that includes an extensive network of 19 manufacturing sites, 43 design centers, and 8 solution engineering centers.