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Onsemi NSV60601MZ4T3G
60V 800mW 120@1A,2V 6A NPN SOT-223 Bipolar Transistors - BJT
Manufacturer # :NSV60601MZ4T3G
Manufacturer :Onsemi
Dasenic # :61F849-DS
Datasheet :
NSV60601MZ4T3G Datasheet
NSV60601MZ4T3G DatasheetSample :
Customer # :
Description : 60V 800mW 120@1A,2V 6A NPN SOT-223 Bipolar Transistors - BJT SOT-223
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.367200 | $ 3.67 |
| 4000+ | $ 0.204000 | $ 816 |
| 8000+ | $ 0.190400 | $ 1523.2 |
| 12000+ | $ 0.185500 | $ 2226 |
| 20000+ | $ 0.180800 | $ 3616 |
In Stock: 24000
MOQ :1 PCS
Packaging :SOT-223
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.3672
Total :$ 0.37
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single, Pre-Biased Bipolar Transistors
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:TO-261-4, TO-261AA
- Power - Max:800 mW
- Supplier Device Package:SOT-223 (TO-261)
- Transistor Type:NPN
- Current - Collector ( Ic) ( Max):6 A
- Voltage - Collector Emitter Breakdown ( Max):60 V
- Vce Saturation ( Max) @ Ib, Ic:300mV @ 600mA, 6A
- Current - Collector Cutoff ( Max):100nA (ICBO)
- D C Current Gain (h F E) ( Min) @ Ic, Vce:120 @ 1A, 2V
- Frequency - Transition:100MHz
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