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Onsemi NJVMJD50T4G
null 1.56W 30@300mA,10V 1A NPN - Bipolar Transistors - BJT
Manufacturer # :NJVMJD50T4G
Manufacturer :Onsemi
Dasenic # :B39A85-DS
Datasheet :
NJVMJD50T4G Datasheet
NJVMJD50T4G DatasheetSample :
Customer # :
Description : null 1.56W 30@300mA,10V 1A NPN - Bipolar Transistors - BJT -
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.548100 | $ 5.48 |
| 2500+ | $ 0.304500 | $ 761.25 |
| 32500+ | $ 0.283300 | $ 9207.25 |
In Stock: 39000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.5481
Total :$ 0.55
Delivery : 
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- Category:Discrete Semiconductor Devices/Single, Pre-Biased Bipolar Transistors
- Product Status:Active
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Power - Max:1.56 W
- Supplier Device Package:DPAK
- Transistor Type:NPN
- Current - Collector ( Ic) ( Max):1 A
- Voltage - Collector Emitter Breakdown ( Max):400 V
- Vce Saturation ( Max) @ Ib, Ic:1V @ 200mA, 1A
- Current - Collector Cutoff ( Max):200µA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:30 @ 300mA, 10V
- Frequency - Transition:10MHz
- Base Product Number:NJVMJD50
- Packaging:Dasenic-Reel®
- Packaging:Cut Tape (CT)
- Packaging:Tape & Reel (TR)
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