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Onsemi NJVMJD31CT4G
100V 1.56W 25@1A,4V 3A NPN TO-252 Bipolar Transistors - BJT
Manufacturer # :NJVMJD31CT4G
Manufacturer :Onsemi
Dasenic # :A3AFD8-DS
Datasheet :
NJVMJD31CT4G Datasheet
NJVMJD31CT4G DatasheetSample :
Customer # :
Description : 100V 1.56W 25@1A,4V 3A NPN TO-252 Bipolar Transistors - BJT TO-252
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.639000 | $ 0.64 |
| 10+ | $ 0.547200 | $ 5.47 |
| 100+ | $ 0.378900 | $ 37.89 |
| 500+ | $ 0.310500 | $ 155.25 |
| 1000+ | $ 0.264600 | $ 264.6 |
In Stock: 7500
MOQ :1 PCS
Packaging :TO-252
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.639
Total :$ 0.64
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single, Pre-Biased Bipolar Transistors
- Product Status:Active
- Operating Temperature:-65°C ~ 150°C (TJ)
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Power - Max:1.56 W
- Supplier Device Package:DPAK
- Transistor Type:NPN
- Current - Collector ( Ic) ( Max):3 A
- Voltage - Collector Emitter Breakdown ( Max):100 V
- Vce Saturation ( Max) @ Ib, Ic:1.2V @ 375mA, 3A
- Current - Collector Cutoff ( Max):50µA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:25 @ 1A, 4V
- Frequency - Transition:3MHz
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