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Onsemi NJVMJD112G
100V 1000@3V,2A NPN 2A 1.75W TO-252 Darlington Transistors![part number has RoHS](/img/RoHS2.png)
Manufacturer # :NJVMJD112G
Manufacturer :Onsemi
Dasenic # :0E6492-DS
Datasheet :
NJVMJD112G Datasheet
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Description : 100V 1000@3V,2A NPN 2A 1.75W TO-252 Darlington Transistors TO-252
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Quantity | Unit Price | Total |
1+ | $ 0.153000 | $ 0.15 |
In Stock: 9510
MOQ :1 PCS
Packaging :TO-252
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.153
Total :$ 0.15
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- Category:Discrete Semiconductor Devices/Single, Pre-Biased Bipolar Transistors
- Product Status:Active
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Power - Max:1.75 W
- Supplier Device Package:DPAK
- Transistor Type:NPN - Darlington
- Current - Collector ( Ic) ( Max):2 A
- Voltage - Collector Emitter Breakdown ( Max):100 V
- Vce Saturation ( Max) @ Ib, Ic:3V @ 40mA, 4A
- Current - Collector Cutoff ( Max):20µA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:1000 @ 2A, 3V
- Frequency - Transition:25MHz
- Base Product Number:NJVMJD112
- Packaging:Tube