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Onsemi MJD31T4G
40V 1.56W 10@3A,4V 3A NPN TO-252 Bipolar Transistors - BJT
Manufacturer # :MJD31T4G
Manufacturer :Onsemi
Dasenic # :8077CC-DS
Datasheet :
MJD31T4G Datasheet
MJD31T4G DatasheetSample :
Customer # :
Description : 40V 1.56W 10@3A,4V 3A NPN TO-252 Bipolar Transistors - BJT TO-252
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.257300 | $ 0.26 |
| 3000+ | $ 0.254400 | $ 763.2 |
| 6000+ | $ 0.251900 | $ 1511.4 |
| 12000+ | $ 0.249400 | $ 2992.8 |
| 18000+ | $ 0.246900 | $ 4444.2 |
In Stock: 6835
MOQ :1 PCS
Packaging :TO-252
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.2573
Total :$ 0.26
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single, Pre-Biased Bipolar Transistors
- Product Status:Active
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Power - Max:1.56 W
- Supplier Device Package:DPAK
- Transistor Type:NPN
- Current - Collector ( Ic) ( Max):3 A
- Voltage - Collector Emitter Breakdown ( Max):40 V
- Vce Saturation ( Max) @ Ib, Ic:1.2V @ 375mA, 3A
- Current - Collector Cutoff ( Max):50µA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:10 @ 3A, 4V
- Frequency - Transition:3MHz
- Base Product Number:MJD31
- Packaging:Dasenic-Reel®
- Packaging:Cut Tape (CT)
- Packaging:Tape & Reel (TR)
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