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Onsemi FQPF6N80CT
POWER FIELD-EFFECT TRANSISTOR, 5![part number has RoHS](/img/RoHS2.png)
Manufacturer # :FQPF6N80CT
Manufacturer :Onsemi
Dasenic # :D1B8C2-DS
Datasheet :
FQPF6N80CT Datasheet
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Description : POWER FIELD-EFFECT TRANSISTOR, 5 TO-220-3 Full Pack Bulk
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Quantity | Unit Price | Total |
1+ | $ 1.044000 | $ 1.04 |
25+ | $ 1.026000 | $ 25.65 |
100+ | $ 0.981000 | $ 98.1 |
500+ | $ 0.936000 | $ 468 |
1000+ | $ 0.886100 | $ 886.1 |
In Stock: 3300
MOQ :1 PCS
Packaging :TO-220-3 Full Pack Bulk
Delivery Time :Ship Within 48 Hours
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Unit Price : $ 1.044
Total :$ 1.04
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220F-3
- Power Dissipation ( Max):51W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):800 V
- Current - Continuous Drain ( Id) @ 25° C:5.5A (Tc)
- Rds On ( Max) @ Id, Vgs:2.5Ohm @ 2.75A, 10V
- Vgs(th) ( Max) @ Id:5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:30 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1310 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- Series:QFET®