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Onsemi FGA60N65SMD
TO-3P-3 IGBTs![part number has RoHS](/img/RoHS2.png)
Manufacturer # :FGA60N65SMD
Manufacturer :Onsemi
Dasenic # :E3A9F6-DS
Datasheet :
FGA60N65SMD Datasheet
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Description : TO-3P-3 IGBTs TO-3P-3
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Quantity | Unit Price | Total |
1+ | $ 5.058000 | $ 5.06 |
30+ | $ 4.005300 | $ 120.16 |
120+ | $ 3.433300 | $ 412 |
510+ | $ 3.051800 | $ 1556.42 |
1020+ | $ 2.613100 | $ 2665.36 |
In Stock: 1889
MOQ :1 PCS
Packaging :TO-3P-3
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 5.058
Total :$ 5.06
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Input Type:Standard
- Power - Max:600 W
- Supplier Device Package:TO-3P
- Reverse Recovery Time (trr):47 ns
- Current - Collector ( Ic) ( Max):120 A
- Voltage - Collector Emitter Breakdown ( Max):650 V
- I G B T Type:Field Stop
- Vce(on) ( Max) @ Vge, Ic:2.5V @ 15V, 60A
- Current - Collector Pulsed ( Icm):180 A
- Switching Energy:1.54mJ (on), 450µJ (off)
- Gate Charge:189 nC
- Td (on/off) @ 25° C:18ns/104ns
- Test Condition:400V, 60A, 3Ohm, 15V
- Base Product Number:FGA60N65