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1 : $0.5310
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Onsemi FDMD8900
POWER FIELD-EFFECT TRANSISTOR, N
Manufacturer # :FDMD8900
Manufacturer :Onsemi
Dasenic # :40E1C9-DS
Datasheet :
FDMD8900 Datasheet
FDMD8900 DatasheetSample :
Customer # :
Description : POWER FIELD-EFFECT TRANSISTOR, N 12-PowerWDFN Bulk
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.531000 | $ 0.53 |
In Stock: 18492
MOQ :1 PCS
Packaging :12-PowerWDFN Bulk
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.531
Total :$ 0.53
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/FETs, MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:12-PowerWDFN
- Technology:MOSFET (Metal Oxide)
- Power - Max:2.1W
- Supplier Device Package:12-Power3.3x5
- Configuration:2 N-Channel (Dual)
- Drain to Source Voltage ( Vdss):30V
- Current - Continuous Drain ( Id) @ 25° C:19A, 17A
- Rds On ( Max) @ Id, Vgs:4mOhm @ 19A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:35nC @ 10V
- Input Capacitance ( Ciss) ( Max) @ Vds:2605pF @ 15V
- Base Product Number:FDMD89
- Packaging:Bulk
