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1 : $1225.4800
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Microchip Technology MSCSM120HM16CTBL3NG
PM-MOSFET-SIC-SBD-BL3
Manufacturer # :MSCSM120HM16CTBL3NG
Manufacturer :Microchip Technology
Dasenic # :DB2A99-DS
Datasheet :
MSCSM120HM16CTBL3NG Datasheet
MSCSM120HM16CTBL3NG DatasheetSample :
Customer # :
Description : PM-MOSFET-SIC-SBD-BL3 Module
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1225.480000 | $ 1225.48 |
In Stock: 1510
MOQ :1 PCS
Packaging :Module
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 1225.48
Total :$ 1225.48
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/FETs, MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Chassis Mount
- Package / Case:Module
- Power - Max:560W
- F E T Type:4 N-Channel (Phase Leg)
- F E T Feature:Silicon Carbide (SiC)
- Drain to Source Voltage ( Vdss):1200V
- Current - Continuous Drain ( Id) @ 25° C:150A
- Rds On ( Max) @ Id, Vgs:16mOhm @ 80A, 20V
- Vgs(th) ( Max) @ Id:2.8V @ 2mA
- Gate Charge ( Qg) ( Max) @ Vgs:464nC @ 20V
- Input Capacitance ( Ciss) ( Max) @ Vds:6040pF @ 1000V
