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Infineon Technologies IRGB4640DPBF
IGBT WITH RECOVERY DIODE
Manufacturer # :IRGB4640DPBF
Manufacturer :Infineon Technologies
Dasenic # :D30A31-DS
Datasheet :
IRGB4640DPBF Datasheet
IRGB4640DPBF DatasheetSample :
Customer # :
Description : IGBT WITH RECOVERY DIODE TO-220-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 3.402000 | $ 3.4 |
| 25+ | $ 3.330000 | $ 83.25 |
| 100+ | $ 3.195000 | $ 319.5 |
| 500+ | $ 3.060000 | $ 1530 |
| 1000+ | $ 2.889000 | $ 2889 |
In Stock: 1550
MOQ :1 PCS
Packaging :TO-220-3
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 3.402
Total :$ 3.40
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Input Type:Standard
- Power - Max:250 W
- Supplier Device Package:TO-220AC
- Reverse Recovery Time (trr):89 ns
- Current - Collector ( Ic) ( Max):65 A
- Voltage - Collector Emitter Breakdown ( Max):600 V
- Vce(on) ( Max) @ Vge, Ic:1.9V @ 15V, 24A
- Current - Collector Pulsed ( Icm):72 A
- Switching Energy:115µJ (on), 600µJ (off)
- Gate Charge:75 nC
- Td (on/off) @ 25° C:41ns/104ns
- Test Condition:400V, 24A, 10Ohm, 15V
